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DTSTAMP:20240626T180035Z
LOCATION:Level 2 Exhibit Hall
DTSTART;TZID=America/Los_Angeles:20240625T170000
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UID:dac_DAC 2024_sess233_ETPOST130@linklings.com
SUMMARY:Simulation and Measurement of MOMCAP Breakdown Risk Based on TCAD
DESCRIPTION:Engineering Track Poster\n\nKun Zhou, Jian Wang, Tingting Hun,
  Guohua Zhou, and Keqing Ouyang (Sanechips Technology Co.,Ltd)\n\nMetal-ox
 ide-metal-capacitance(MOMCAP) is widely used in integrated circuits becaus
 e of its high unit capacitance, low parasitic, and good RF characteristics
 . As MOMCAP is increasingly sensitive to manufacturability in advanced tec
 hnology, the foundry typically provides design rules with large margins to
  ensure yield. Besides, the reliability of non-standard MOMCAPs cannot be 
 effectively guaranteed in differentiated competition, which leading to a d
 eterioration in the reliability.\n\nTo solve these problems, we propose a 
 breakdown simulation and mearsurement methodology. By applying a fixed pot
 ential to the MOMCAP plate and analyse the relationship between electric f
 ield intensity and breakdown field intensity, so as to achieve the predict
 ion of the breakdown risk. On the basis of simulation, the results are fur
 ther validated by real measurement. Here, decap is used to make samples an
 d nanoprobe is used to test the BV curve. The test results show that the b
 reakdown voltage is almost consistent with the simulation, which verifies 
 the validity of the simulation and nanoprobe result. The method provides a
 ccurate guidance for the prediction of subsequent projects of the same typ
 e. Besides, considering the outstanding performance of TCAD, we have also 
 performed reliability simulations such as BV and TDDB on MOSFET devices to
  promote the capability of DTCO.\n\nTopic: Back-End Design, Embedded Syste
 ms, Front-End Design, IP
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