Presentation
Simulation and Measurement of MOMCAP Breakdown Risk Based on TCAD
DescriptionMetal-oxide-metal-capacitance(MOMCAP) is widely used in integrated circuits because of its high unit capacitance, low parasitic, and good RF characteristics. As MOMCAP is increasingly sensitive to manufacturability in advanced technology, the foundry typically provides design rules with large margins to ensure yield. Besides, the reliability of non-standard MOMCAPs cannot be effectively guaranteed in differentiated competition, which leading to a deterioration in the reliability.
To solve these problems, we propose a breakdown simulation and mearsurement methodology. By applying a fixed potential to the MOMCAP plate and analyse the relationship between electric field intensity and breakdown field intensity, so as to achieve the prediction of the breakdown risk. On the basis of simulation, the results are further validated by real measurement. Here, decap is used to make samples and nanoprobe is used to test the BV curve. The test results show that the breakdown voltage is almost consistent with the simulation, which verifies the validity of the simulation and nanoprobe result. The method provides accurate guidance for the prediction of subsequent projects of the same type. Besides, considering the outstanding performance of TCAD, we have also performed reliability simulations such as BV and TDDB on MOSFET devices to promote the capability of DTCO.
To solve these problems, we propose a breakdown simulation and mearsurement methodology. By applying a fixed potential to the MOMCAP plate and analyse the relationship between electric field intensity and breakdown field intensity, so as to achieve the prediction of the breakdown risk. On the basis of simulation, the results are further validated by real measurement. Here, decap is used to make samples and nanoprobe is used to test the BV curve. The test results show that the breakdown voltage is almost consistent with the simulation, which verifies the validity of the simulation and nanoprobe result. The method provides accurate guidance for the prediction of subsequent projects of the same type. Besides, considering the outstanding performance of TCAD, we have also performed reliability simulations such as BV and TDDB on MOSFET devices to promote the capability of DTCO.
Event Type
Engineering Track Poster
TimeTuesday, June 255:24pm - 5:25pm PDT
LocationLevel 2 Exhibit Hall
Back-End Design
Embedded Systems
Front-End Design
IP